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5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration x8 Pieces in Kit 1 Compatibility
HYMP151P72CP4-Y5 Capacity 4GB (1x 4GB) Brand Hynix Speed DDR2-667 - 667MT/s - PC2-5300 Voltage 1
Release the plunger to grab and retain small parts
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 32GB (1x 32GB) DDR4 2133 MT/s 288-pin RDIMM RAM module from Samsung
Write Speed: 200 MB/sec
Samsung 1GB (1x 1GB) CL9 DDR3-1333 PC3-10600 1.8V 204-pin SODIMM RAM Module Form Factor_184-pin UDIMM 5V Technology DDR3 Error CorrectionProduct Overview This 1GB (1x 1GB) DDR3 1333 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 8V with a CAS Latency of CL9, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
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